Enhancement of the modulation bandwidth for GaN-based light-emitting diode by surface plasmons

Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons.

Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally syn...

Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation

SiO2/Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based Light-Emitting Diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the l...

GaN-based Light Emitting Diode with Embedded SiO2 Pattern for Enhanced Light Extraction

The n-GaN layer of c-plane GaInN/GaN light emitting diodes (LEDs) on sapphire was modified to contain a pattern of SiO2 nanorods. This embedded pattern of 300 nm long rods and diameter of 200 400 nm was created by thermal agglomeration of a Ni mask layer and subsequent dry-etching. The light output power (LOP) and external quantum efficiency (EQE) of the resulting LEDs increased both by some 25...

Computational study of an InGaN/GaN nanocolumn light-emitting diode

Enhancement in external quantum efficiency of blue light-emitting diode by photonic crystal surface grating

Blue photonic crystal light-emitting diodes were evaluated with photonic crystal hole patterns. The diameter of the holes, lattice constant, and emission wavelength were selected to be 110, 220 and 450 nm, respectively, to attain a maximum enhancement in the wallplug efficiency. The improvement in external quantum efficiency was 30–50%. Changes in voltage characteristics caused by the etched ho...